Atom-scale model could help improve material growth for advanced electronics
Penn State researchers have refined an atom-scale model of how silicon carbide changes from a solid into vapor during crystal growth, work that could help manuf…
Penn State researchers have refined an atom-scale model of how silicon carbide changes from a solid into vapor during crystal growth, work that could help manufacturers produce higher-quality material for advanced electronics while reducing costly trial-and-error experiments.
原文出处：Phys.org （本文由聚合程序自动采集，版权归原作者所有）