III-nitride device integrates sensing and memory for in-sensor computing
A new study published in Nature Materials reports that researchers have developed an aluminum gallium nitride device that combines light detection, memory and b…
A new study published in Nature Materials reports that researchers have developed an aluminum gallium nitride device that combines light detection, memory and basic processing by controlling charge at polarization interfaces. The device can detect light at the nanowatt-per-square-centimeter level and operate stably at temperatures up to 300°C.
原文出处：Phys.org （本文由聚合程序自动采集，版权归原作者所有）